High Power Density
Supports compact amplifier layouts with strong output power capability.
Products
Broadband RF power amplifier solutions from 20 kHz to 8 GHz for demanding communication and defense requirements.
Products
GaN-on-SiC transistor technology supports high power density, thermal robustness, and broadband RF performance for modern power amplifier systems.
UVICS introduces GaN device categories as building blocks for communication, radar, industrial RF, and laboratory amplifier requirements.
UVICS
Device-level advantages for robust RF power design.
Supports compact amplifier layouts with strong output power capability.
SiC substrate characteristics support demanding thermal operating conditions.
Suitable for broadband driver, final stage, and custom amplifier designs.
UVICS
Representative use cases for broadband amplifier platforms.
HF/VHF/UHF, tactical radio, and broadband communication amplifier stages.
Pulsed and broadband RF power chains requiring efficiency and ruggedness.
RF energy systems and ISM-related platforms requiring stable power delivery.
UVICS
Category examples only. This is not a product database.
Broadband
For amplifier systems requiring wide frequency coverage and stable RF output.
Broadband
For radar, test, and high peak power RF amplifier use.
Broadband
For stable gain blocks and pre-driver amplifier sections.
Datasheet Request
Review available category documents or request additional technical data through UVICS support.